Free release

SAND

TradePlatform@qq.com
Name: SAND
CAS: 7631-86-9 ;60676-86-0 ;14464-46-1 ;14808-60-7
Synonyms: SILICON (IV) OXIDE, 99.9% (METALS BASIS) -325 MESH ; SILICON (IV) OXIDE, 99.5% -300 MESH POWDER ; SILICON (IV) OXIDE, 99.99% (METALS BASIS) 1-3MM FUSED LUMP FOR VACCUM DEPOSITION ; SILICON (IV) OXIDE, 99.9% (METALS BASIS) -325 MESH ; SAND ; SILICON (IV) OXIDE, 99.5% -500 MESH POWDER ; SILICON (IV) OXIDE 99.99% (METALS BASIS) 3-5MM FUSED LUMP FOR VACCUM DEPOSITION ; SAND, OTTAWA ; SILICON (IV) OXIDE, 99.995% (METALS BASIS) -40 MESH POWDER ; SILICON DIOXIDE ; SILICA NANOSPRINGS COATED WITH TITANIUM DIOXIDE AND GROWN ON FIBER GLASS SUBSTRATE (3.5 X 8CM) ; QUARTZ SAND ; SILICON (IV) OXIDE ELECTRONIC GRADE (99.999%-SI) ; SILICON DIOXIDE SPUTTERING TARGET 99.99% (METALS BASIS) ; QUARTZ ; FLINT ; SILICA NANOSPRINGS GROWN ON GLASS SLIDE SUBSTRATE (2.5 X 7.5CM) ; SILICON DIOXIDE 99+% FOR ANALYTICAL PURPOSE ; SILICA ; SILICA NANOSPRINGS COATED WITH ZINC OXIDE AND GROWN ON FIBER GLASS SUBSTRATE (3.5 X 8CM) ; SILICA SAND ; WHITE QUARTZ ; CRISTOBALITE ; SILICA NANOSPRINGS GROWN ON ALUMINUM FOIL SUBSTRATE (3.5 X 8CM) ; SILICA NANOSPRINGS COATED WITH TITANIUM DIOXIDE AND GROWN ON GLASS SLIDE SUBSTRATE (2.5 X 7.5CM) ; SILICON DIOXIDE SPUTTERING TARGET 99.995% (METALS BASIS) ; SILICON (IV) OXIDE, 99.99% (METALS BASIS) 3-12MM FUSED LUMP FOR VACCUM DEPOSITION
MDL.: MFCD02100519
H bond acceptor: 0
H bond donor: 0
InChi: InChI=1S//
InChiKey: InChIKey=MOSFIJXAXDLOML-UHFFFAOYSA-N

Property

Melting Point: 1710 DEG C
Boiling Point: 2230 DEG C
Specification: REAGENT GRADE

Safety information

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