Name: | LANTHANUM ALUMINUM OXIDE |
CAS: | 12003-65-5 |
Synonyms: | LANTHANUM(III) ALUMINUM OXIDE ; LANTHANUM ALUMINATE ; LANTHANUM ALUMINUM OXIDE SUBSTRATE ; LANTHANUM ALUMINUM OXIDE |
MDL.: | MFCD00144550 |
H bond acceptor: | 3 |
H bond donor: | 0 |
Smile: | O=[Al]O[La]=O |
InChi: | InChI=1S/Al.La.3O |
InChiKey: | InChIKey=KJXBRHIPHIVJCS-UHFFFAOYSA-N |
Property |
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Melting Point: | 2080 DEG C(LIT) |
Density: | 6.52g/mLat25°C(lit.) |
Comments: | ASSAY METHOD: TRACE METALS BASIS DESCRIPTION: SINGLE SIDE POLISHED DIELECTRIC CONSTANT: APPROX 25 FEATURES AND BENEFITS: SINGLE CRYSTAL LANTHANUM ALUMINATE SUBSTRATE LATTICES HAVE A GOOD LATTICE MATCH WITH MOST PEROVSKITE-STRUCTURED MATERIALS. IT IS AN EXCELLENT SUBSTRATE FOR THE EPITAXIAL GROWTH OF MAGNETIC AND FERRO-ELECTRIC THIN FILMS AND HIGH-TEMPERATURE SUPERCONDUCTORS. DUE TO ITS DIELECTRIC PROPERTIES IT IS ALSO POSSES PROPERTIES FOR LOW-LOSS MICROWAVE AND DIELECTRIC RESONANCE APPLICATIONS OTHER NOTES: INSOLUBLE IN MINERAL ACIDS AT 25 DEG C, SOLUBLE IN H3PO3 AT >150 DEG C OTHER NOTES: LOSS TANGENT AT 10 GHZ = APPROX 3 X 10-4 AT 300 K, 0.6 X 10-4 AT 77 K OTHER NOTES: THERMAL EXPANSION = 10 X 10-6/DEG C PHYSICAL FORM: CUBIC AT >435 DEG C (A = 3.821 ANGSTROM) PHYSICAL FORM: RHOMBOHEDRAL AT 25 DEG C (A = 5.357 ANGSTROM, C = 13.22 ANGSTROM) SEMICONDUCTOR PROPERTIES: 100 SIZE: 10 MM X 10 MM X 0.5 MM UNSPSC: 12352300 WGK: 3 |
Safety information |
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WGK Germany: | 3 |
LANTHANUM ALUMINUM OXIDE
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